Electrical characterization of the InAlN/GaN heterostructures by capacitance methods

Author

Stuchlikova, L. ; Petrus, M. ; Kovac, J. ; Rybar, J. ; Harmatha, L. ; Donoval, Daniel ; Benkovska, J. ; Behmenburg, H. ; Heuken, M.

Author_Institution

Fac. of Electr. Eng. & Inf. Technol., Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

51

Lastpage

54

Abstract

This paper highlights the electrical characterization of 4 types of the Schottky structures prepared on InAlN/GaN epi-layer designed for HEMT´s with the AlN buffer layer and semi-insulating 6H-SiC substrate, which have different mechanical strain due to different growth conditions, using capacitance-voltage and Deep Level Transient Spectroscopy methods (DLTS). The sudden fall of capacitance in the range of reverse voltage from -2.5 to -3.3 V is caused by heterostructure´s interface depletion. According to the DLTS measurement it is highly probable that the similar system of defects is present in all samples. Parameters of 7 hole-like traps were identified. Three of them HT1 (1.48 eV) HT2 (1.06 eV) and HT4 (1.01 eV) are certainly present in two structures and one HT3 (1.24 eV) in three structure. The highest concentration of defects has structure with the highest mechanical strain (Strain Raman 2 GPa).

Keywords

III-V semiconductors; aluminium compounds; buffer layers; capacitance; deep level transient spectroscopy; gallium compounds; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; AlN; AlN buffer layer; DLTS measurement; HEMT; InAlN-GaN; InAlN-GaN epilayer; InAlN-GaN heterostructures; Schottky structures; SiC; capacitance-voltage method; deep level transient spectroscopy method; defect concentration; defect system; electrical characterization; electron volt energy 1.01 eV; electron volt energy 1.06 eV; electron volt energy 1.24 eV; electron volt energy 1.48 eV; growth conditions; heterostructure interface depletion; hole-like trap parameters; mechanical strain; reverse voltage; semi-insulating 6H-SiC substrate; voltage -3.3 V to -2.5 V; Capacitance; Capacitance measurement; Gallium nitride; Semiconductor device measurement; Strain; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418557

Filename

6418557