DocumentCode
3047751
Title
Hot-spot detection and correction using full-chip based process window analysis
Author
Kim, Sang-Wook ; Suh, Sung-Soo ; Kim, Young-Chang ; Lee, Suk-Joo ; Lee, Jung-Hyeon ; Kang, Chang-Jin ; Moon, Joo-Tae
Author_Institution
Samsung Electron., Hwasung-City
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
56
Lastpage
57
Abstract
In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning (DFP) using a commercial OPC tool. Exposure latitude and dose sensitivity value represent image log slope (ILS) while DOF represents critical dimension variation at a defocused condition.
Keywords
masks; photolithography; defocused condition; dose sensitivity value; full-chip based process window analysis; hot-spot detection; photolithographic process; Computational modeling; Costs; Error analysis; Error correction; Focusing; Image segmentation; Moon; Performance analysis; Postal services; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456102
Filename
4456102
Link To Document