DocumentCode :
3047765
Title :
The Study of Graytone Mask Structure for Manufacturing Thin Film Transistor
Author :
Kang, H.J. ; Cha, H.S. ; Ahn, J.H. ; Ryu, Han-Youl ; Kim, S.W. ; Nam, K.S.
Author_Institution :
S&S TECH Corporation, Dae-Gu
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
58
Lastpage :
59
Abstract :
Three types of GTM structures for reduction technology of TFT-LCD manufacturing process are studied. Through a simulation results, it is confirmed that the slit transmittance modulation (TM) mask structure is superior, which has good Gaussian and smooth curve in the graytone area of residual photoresist. Also, the slit TM mask has controllability of phase shift and transmittance by controlling the TM layer.
Keywords :
liquid crystal displays; photoresists; thin film transistors; TFT-LCD manufacturing process; graytone mask structure; reduction technology; residual photoresist; slit transmittance modulation mask structure; thin film transistor; Controllability; Costs; Manufacturing processes; Materials science and technology; Optical films; Optical materials; Research and development; Resists; Solid modeling; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456103
Filename :
4456103
Link To Document :
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