Title :
High temperature AlGaN/GaN HFET microwave characterization
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters fT and fmax were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 3D diagrams; AlGaN-GaN; AlGaN-GaN HEMT devices; DC output characteristics; DC properties; high temperature AlGaN-GaN HFET microwave characterization; high temperature on-wafer microwave characterization setup; microwave parameters; microwave properties; temperature 20 degC to 425 degC; Aluminum gallium nitride; Gallium nitride; HEMTs; Microwave devices; Microwave measurements; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418562
