Electron beam lithography simulation for the patterning of EUV masks

The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress.