TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Author

Faramehr, S. ; Igic, P. ; Kalna, Karol

Author_Institution

Electron. Syst. Design Centre, Swansea Univ., Swansea, UK

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

11

Lastpage

14

Abstract

Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.

Keywords

III-V semiconductors; diffusion; disperse systems; electron traps; gallium compounds; high electron mobility transistors; technology CAD (electronics); tunnelling; wide band gap semiconductors; 2D TCAD transient simulation; GaN; HEMT; Schottky electron tunnelling; TCAD modelling; acceptor-type defects; current dispersion; drift diffusion models; dynamic picture; electron detrapping; high drain pulse voltages; hydrodynamic transport models; low drain pulse voltages; size 0.25 mum; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418566

Filename

6418566