• DocumentCode
    3047920
  • Title

    The exploratory development of a high power S-band solid state radar transmitter

  • Author

    Hay, J. ; Kerstenbeck, E. ; Rahn, D. ; Halayko, D. ; Painchaud, G.

  • Author_Institution
    Canadian Marconi Co., Kanata, Ont., Canada
  • fYear
    1990
  • fDate
    7-10 May 1990
  • Firstpage
    135
  • Lastpage
    140
  • Abstract
    A solid-state power amplifier has been developed using 100 W S -band silicon bipolar transistors. The amplifier produces a nominal 400 W peak output power from 2.7 GHz to 3.0 GHz, at pulse widths up to 50 μs, at a 10% maximum duty cycle and 30% efficiency. A high-power planar hybrid combiner was also designed to combine 16 amplifiers to provide a nominal 5 kW RF output power. The isolation between combining ports ensures graceful degradation of output power should individual amplifier modules fail, and allows replacement of the modules during transmitter operation. Higher output powers can be achieved by adding more combining ports to the design or by incorporating a second stage of combining to sum the outputs from several 16-way combiners. The feasibility of solid-state radar transmitter technology at S-band is confirmed
  • Keywords
    bipolar transistors; microwave amplifiers; power amplifiers; radar transmitters; solid-state microwave circuits; 100 W; 2.7 to 3.0 GHz; 400 W; 5 kW; RF output power; S-band solid state radar transmitter; Si bipolar transistors; high power; planar hybrid combiner; power amplifier; Bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Silicon; Solid state circuits; Space vector pulse width modulation; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radar Conference, 1990., Record of the IEEE 1990 International
  • Conference_Location
    Arlington, VA
  • Type

    conf

  • DOI
    10.1109/RADAR.1990.201151
  • Filename
    201151