DocumentCode
3047920
Title
The exploratory development of a high power S -band solid state radar transmitter
Author
Hay, J. ; Kerstenbeck, E. ; Rahn, D. ; Halayko, D. ; Painchaud, G.
Author_Institution
Canadian Marconi Co., Kanata, Ont., Canada
fYear
1990
fDate
7-10 May 1990
Firstpage
135
Lastpage
140
Abstract
A solid-state power amplifier has been developed using 100 W S -band silicon bipolar transistors. The amplifier produces a nominal 400 W peak output power from 2.7 GHz to 3.0 GHz, at pulse widths up to 50 μs, at a 10% maximum duty cycle and 30% efficiency. A high-power planar hybrid combiner was also designed to combine 16 amplifiers to provide a nominal 5 kW RF output power. The isolation between combining ports ensures graceful degradation of output power should individual amplifier modules fail, and allows replacement of the modules during transmitter operation. Higher output powers can be achieved by adding more combining ports to the design or by incorporating a second stage of combining to sum the outputs from several 16-way combiners. The feasibility of solid-state radar transmitter technology at S -band is confirmed
Keywords
bipolar transistors; microwave amplifiers; power amplifiers; radar transmitters; solid-state microwave circuits; 100 W; 2.7 to 3.0 GHz; 400 W; 5 kW; RF output power; S-band solid state radar transmitter; Si bipolar transistors; high power; planar hybrid combiner; power amplifier; Bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Silicon; Solid state circuits; Space vector pulse width modulation; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Radar Conference, 1990., Record of the IEEE 1990 International
Conference_Location
Arlington, VA
Type
conf
DOI
10.1109/RADAR.1990.201151
Filename
201151
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