Title :
DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)
Author :
Ahmad, Mohiuddin ; Butt, H.T. ; Tauqeer, Tauseef ; Missous, Mohamed
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci. (SEECS), Nat. Univ. of Sci. & Technol., Islamabad, Pakistan
Abstract :
An epitaxial structure comprising depletion mode In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; DC characterization; DC parameters; In0.7Ga0.3As-In0.52Al0.48As-InP; InGaAs-InAlAs-InP based pseudomorphic HEMT; SILVACO; delta doping; depletion mode pseudomorphic HEMT; device architecture; epitaxial structure; gate length; highly strained pseudomorphic channel layer; inverse device modelling; maximum drain current; optimized performance; pinch-off voltage; pseudomorphic HEMT device; supply layer thicknesses; transconductance; Doping; Indium gallium arsenide; Indium phosphide; Logic gates; PHEMTs; Semiconductor process modeling;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418571
