Dual Threshold Domino OR Gates Leakage Power and Delay Forecasting Based on Wavelet Neural Networks in 45 nm Technology

Author

Wang, Jinhui ; Wu, Wuchen ; Gong, Na ; Zuo, Lei ; Hou, Ligang ; Geng, Shuqin ; Wang Zhang

Author_Institution

VLSI & Syst. Lab., Beijing Univ. of Technol., Beijing, China

Volume

4

fYear

2009

fDate

19-21 May 2009

Firstpage

72

Lastpage

75

Abstract

An approach for forecasting the leakage power and the delay of the dual threshold domino OR gates based on wavelet neural networks (WNN) in 45 nm technology is proposed. The forecasting system has fast convergence and high precision. By studying the impact of the dual threshold voltage technique (DTV) on leakage reduction and delay increase, it successfully forecasts the nonlinear changing of the leakage power and delay of the different inputs domino OR gates. At last, the reason for the forecasting error and the trend of the forecasting curve are explained, respectively.

Keywords

delays; electronic engineering computing; leakage currents; logic gates; low-power electronics; nanotechnology; neural nets; threshold elements; wavelet transforms; delay forecasting; dual threshold domino OR gate leakage power forecasting; dual threshold voltage technique; forecasting error curve; leakage power reduction; nonlinear change; size 45 nm; wavelet neural network; Circuits; Delay effects; Delay estimation; Digital TV; Energy consumption; Gate leakage; Neural networks; Propagation delay; Technology forecasting; Threshold voltage; Wavelet Neural Networks; delay; dual threshold domino OR; leakage power;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Systems, 2009. GCIS '09. WRI Global Congress on

Conference_Location

Xiamen

Print_ISBN

978-0-7695-3571-5

Type

conf

DOI

10.1109/GCIS.2009.9

Filename

5209342