DocumentCode :
3048020
Title :
2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation
Author :
Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
fYear :
2012
fDate :
11-15 Nov. 2012
Firstpage :
179
Lastpage :
182
Abstract :
New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.
Keywords :
SPICE; power MOSFET; semiconductor device models; 2D circuit electrothermal model; 2D thermal equivalent network; 3D circuit electrothermal model; SPICE-like simulation model; circuit SPICE-like simulations; distributed properties; electrical properties; electrothermal MOSFET model; interactive coupling; multidimensional heat flow; power MOSFET; thermal properties; unclamped inductive switching test simulation; Heating; Integrated circuit modeling; MOSFET circuits; Semiconductor device modeling; Thermal analysis; Thermal conductivity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
Type :
conf
DOI :
10.1109/ASDAM.2012.6418573
Filename :
6418573
Link To Document :
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