Title :
Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors
Author :
Florovic, M. ; Kovac, J. ; Sciana, B. ; Radziewicz, D. ; Pucicki, D. ; Zborowska-Lindert, I. ; Tlaczala, M. ; Vavra, I.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
This work presents electrical and optical properties of Schottky barrier photodetectors containing the triple quantum well (MQW) InGaAsN/GaAs structures grown by atmospheric pressure metal organic vapour phase epitaxy. The peaks corresponding to optical transitions in MQW were identified by photocurrent spectroscopy and compared with simulations. The measurements revealed that there are two embedded and overlapped QW which can be simulated as InxGa1-xAs1-yNy/GaAs QW and InxGa1-xAs/GaAs QW with appropriate width and composition. This effect can be assigned to the interdiffusion between QW and GaAs during the structure growth. The low temperature spectral measurements revealed the shift and intensity of optical transitions in particular QWs.
Keywords :
III-V semiconductors; Schottky barriers; chemical interdiffusion; gallium arsenide; indium compounds; photodetectors; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsN-GaAs; QW Schottky barrier photodetectors; atmospheric pressure metal organic vapour phase epitaxy; electrical properties; interdiffusion; low temperature spectral measurements; optical properties; optical transitions; photocurrent spectroscopy; structure growth; triple quantum well structures; Gallium arsenide; Photodetectors; Quantum well devices; Schottky barriers; Semiconductor device measurement; Temperature; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418577
