DocumentCode :
3048135
Title :
Optical and electrical characterization of photonic crystal light emitting diodes
Author :
Hronec, Pavol ; Kovac, J. ; Skriniarova, J. ; Kovac, J. ; Suslik, L.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
fYear :
2012
fDate :
11-15 Nov. 2012
Firstpage :
155
Lastpage :
158
Abstract :
The paper deals with electrical and optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (MQW LED) structure including two-dimensional photonic crystals (2D PhC) patterned in the LED surface. The active region of LED consists of three quantum wells with emitting maximum at 845 nm. The effect of photonic crystal with square symmetry and 500 nm grating period on electrical and optical properties of LED was investigated. The measurements of L-I characteristics show, that app. 3 times higher optical power from LED structure was achieved using photonic crystals in comparison with structure without PhC.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; photonic crystals; quantum well devices; Al0.295Ga0.705As-GaAs; L-I characteristics; LED surface; MQW LED structure; electrical properties; multiquantum well light emitting diode; optical properties; photonic crystal light emitting diodes; square symmetry; two-dimensional photonic crystals; Light emitting diodes; Optical fibers; Optical reflection; Optical surface waves; Photonic crystals; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
Type :
conf
DOI :
10.1109/ASDAM.2012.6418579
Filename :
6418579
Link To Document :
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