Characterization of a coaxial mid-gap SB CNTFET inverter

This paper investigates the performance of digital inverter gates based on mid-gap Schottky barrier carbon nanotube field efffect transistors (SB CNTFET) with coaxial structure. This structure is the most suitable CNT structure for future 3D integration. Results show that the midgap (SB) CNTFET with V_fb=0 is easier to fabricate and produces identical n and p transistors but it does not satisfy any other requirements for future digital applications. On the other hand, the DC and transient performance of V_fb=V_dd/2 transistors are better but the fabrication is more difficult and uses different materials for the gate of the n and p types.