Title :
Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface
Author :
Dubecky, F. ; Hubik, P. ; Gombia, E. ; Kindl, D. ; Dubecky, M. ; Mudron, J. ; Bohacek, P. ; Sekacova, M.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
The work reports on the study of metal/semi-insulating GaAs/metal systems with different contacts: Mg, Gd, In and AuGeNi eutectic. Charge carrier transport through the interface is characterized by the current-voltage measurements. Observed results: i) opposite generally accepted “ohmic, bulk limited” charge transport at low bias, ii) are in contradiction with the thermionic emission model of charge transport in M-SI GaAs, and iii) demonstrate the unpinning of the Fermi level at the M-SI GaAs interface.
Keywords :
Fermi level; III-V semiconductors; carrier relaxation time; electrical contacts; gadolinium; gallium arsenide; germanium compounds; gold compounds; indium; magnesium; thermionic emission; AuGeNi; AuGeNi eutectic; Fermi level; GaAs; Gd; Gd eutectic; In; In eutectic; Mg; Mg eutectic; bulk limited charge transport; charge carrier transport; contacts; current-voltage measurements; low bias; metal/semiinsulating GaAs/metal systems; ohmic charge transport; thermionic emission; unpinning demonstration; Electrodes; Gallium arsenide; Gold; Metallization; Resistance; Silicon;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418582
