Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

Author

Dubecky, F. ; Hubik, P. ; Gombia, E. ; Kindl, D. ; Dubecky, M. ; Mudron, J. ; Bohacek, P. ; Sekacova, M.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2012

fDate

11-15 Nov. 2012

Firstpage

143

Lastpage

146

Abstract

The work reports on the study of metal/semi-insulating GaAs/metal systems with different contacts: Mg, Gd, In and AuGeNi eutectic. Charge carrier transport through the interface is characterized by the current-voltage measurements. Observed results: i) opposite generally accepted “ohmic, bulk limited” charge transport at low bias, ii) are in contradiction with the thermionic emission model of charge transport in M-SI GaAs, and iii) demonstrate the unpinning of the Fermi level at the M-SI GaAs interface.

Keywords

Fermi level; III-V semiconductors; carrier relaxation time; electrical contacts; gadolinium; gallium arsenide; germanium compounds; gold compounds; indium; magnesium; thermionic emission; AuGeNi; AuGeNi eutectic; Fermi level; GaAs; Gd; Gd eutectic; In; In eutectic; Mg; Mg eutectic; bulk limited charge transport; charge carrier transport; contacts; current-voltage measurements; low bias; metal/semiinsulating GaAs/metal systems; ohmic charge transport; thermionic emission; unpinning demonstration; Electrodes; Gallium arsenide; Gold; Metallization; Resistance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4673-1197-7

Type

conf

DOI

10.1109/ASDAM.2012.6418582

Filename

6418582