DocumentCode
3048246
Title
Graphene-based FETs
Author
Schwierz, Frank
Author_Institution
Fachgebiet Festkorperelektronik & Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear
2012
fDate
11-15 Nov. 2012
Firstpage
131
Lastpage
138
Abstract
Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.
Keywords
carrier mobility; field effect transistors; graphene; C; graphene transistors; graphene-based FET; high carrier mobilities; two-dimensional carbon-based material; Graphene; HEMTs; Logic gates; MOSFETs; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4673-1197-7
Type
conf
DOI
10.1109/ASDAM.2012.6418583
Filename
6418583
Link To Document