• DocumentCode
    3048246
  • Title

    Graphene-based FETs

  • Author

    Schwierz, Frank

  • Author_Institution
    Fachgebiet Festkorperelektronik & Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    2012
  • fDate
    11-15 Nov. 2012
  • Firstpage
    131
  • Lastpage
    138
  • Abstract
    Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.
  • Keywords
    carrier mobility; field effect transistors; graphene; C; graphene transistors; graphene-based FET; high carrier mobilities; two-dimensional carbon-based material; Graphene; HEMTs; Logic gates; MOSFETs; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4673-1197-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2012.6418583
  • Filename
    6418583