DocumentCode :
3048246
Title :
Graphene-based FETs
Author :
Schwierz, Frank
Author_Institution :
Fachgebiet Festkorperelektronik & Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
2012
fDate :
11-15 Nov. 2012
Firstpage :
131
Lastpage :
138
Abstract :
Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.
Keywords :
carrier mobility; field effect transistors; graphene; C; graphene transistors; graphene-based FET; high carrier mobilities; two-dimensional carbon-based material; Graphene; HEMTs; Logic gates; MOSFETs; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
Type :
conf
DOI :
10.1109/ASDAM.2012.6418583
Filename :
6418583
Link To Document :
بازگشت