Title :
Graphene-based FETs
Author_Institution :
Fachgebiet Festkorperelektronik & Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.
Keywords :
carrier mobility; field effect transistors; graphene; C; graphene transistors; graphene-based FET; high carrier mobilities; two-dimensional carbon-based material; Graphene; HEMTs; Logic gates; MOSFETs; Radio frequency;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418583