DocumentCode :
3048250
Title :
Performance Comparison Between Asymmetric Poly-Si gate FinFETs and TiN gate FinFETs
Author :
Kim, Han-geon ; An, Hong-sun ; Kim, Young-kyu ; Won, Taeyoung
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
110
Lastpage :
111
Abstract :
In this paper, the numerical simulation revealed that the threshold voltage (VT) can be controlled within -0.1 ~ +0.5 V by the varying of doping concentration of the poly-silicon gate region from 1.0 times 1018 to 1.0 times 1020 cm-3. It was also confirmed that the VT tolerance of the FinFET on the variation of the fin thickness in this study can be appreciably improved over the conventional FinFET structure.
Keywords :
MOSFET; elemental semiconductors; impurity distribution; silicon; titanium compounds; Si; TiN; TiN gate FinFET; asymmetric poly-Si gate FinFET; doping concentration; fin thickness; threshold voltage; Controllability; Doping; FinFETs; Immune system; Information technology; Logic devices; Numerical simulation; Robustness; Threshold voltage; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456129
Filename :
4456129
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3048250
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