Title :
Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application
Author :
Radziewicz, D. ; Sciana, B. ; Pucicki, D. ; Serafinczuk, J. ; Tlaczala, M. ; Latkowska, M. ; Florovic, M. ; Kovac, J.
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
Abstract :
This work presents the epitaxial growth of undoped multiple quantum well (MQW) - 3 × InyGa1-yAs1-xNx/GaAs - structures obtained by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE). The relations between the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and the composition of the resulting InyGa1-yAs1-xNx films were investigated. The influence of the growth temperature on the quantum well InyGa1-yAs1-xNx parameters were observed. Based upon this experiment, the technology parameters were estimated. These results were applied to the optimization of the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and temperature for the growth of quantum well of InyGa1-yAs1-xNx.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; vapour phase epitaxial growth; InGaAsN-GaAs; MOVPE growth parameter; atmospheric pressure metalorganic vapour phase epitaxy; growth temperature; hydrogen flow rate; solar cells; undoped multiple quantum well; Gallium arsenide; Hydrogen; Indium; Nitrogen; Optical saturation; Photovoltaic cells; Quantum well devices;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418585
