Preliminary Study of Suppression of Backscattering Phenomenon from Drain Region on Double Gate MOSFET´s Characteristics

In this paper, we have proposed a suppression method of a backscattering phenomenon from a drain region of a Double Gate MOSFET (DG-MOSFET), and tried to analyze quantitatively the backscattering effect on the DG-MOSFET´s characteristics. Moreover, it is confirmed that the suppression of backscattering phenomenon largely improves the AC characteristics such as cutoff frequency, although the backscattering phenomenon does not largely influence the DC characteristics such as drain current in stable state. Further analysis about the backscattering effect on the DG-MOSFETs characteristics is under investigation.