DocumentCode
3048296
Title
Ab-initio Calculations of Stress Effects on Indium Diffusion in Uniaxally Strained Silicon
Author
Kim, Young-kyu ; Cho, Bum-Goo ; Park, Soon-Yeol ; Won, Taeyoung
Author_Institution
Inha Univ., Incheon
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
118
Lastpage
119
Abstract
This paper investigates tensile uniaxial strain effects on indium atom migration for researching shallow junction devices by using ab-initio calculation. This study reveals which tensile strain on silicon substrate affect the total and migration energy of In-Si complexes.
Keywords
ab initio calculations; diffusion; elemental semiconductors; indium; silicon; stress effects; total energy; Si-In; ab-initio calculation; diffusion; migration energy; shallow junction devices; silicon substrate; stress effects; tensile uniaxial strain effects; total energy; Atomic measurements; Boron; CMOS technology; Capacitive sensors; Indium; Ion implantation; Silicon; Stress; Tensile strain; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456132
Filename
4456132
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