Title :
GaN-based electronics
Author :
Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
An overview of III-nitride heterojunction FET technologies is given in this paper. Structural parameter designs of HEMTs, including various field-plate parameters, are described for high-voltage applications. For low-leakage operation, future HEMT technology on a free-standing GaN substrate is presented. Some of the theoretical design issues will be also addressed.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; wide band gap semiconductors; GaN; GaN-based electronics; HEMT structural parameter designs; HEMT technology; III-nitride heterojunction FET technologies; field-plate parameters; free-standing GaN substrate; high-voltage applications; low-leakage operation; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Substrates;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418587
