DocumentCode :
3048310
Title :
Growth of Layered Single Crystal Whiskers for Fabricating Single Electron Tunneling (SET) Devices
Author :
Oh, S.-Y. ; Kim, G.-S. ; Kim, S.-J.
Author_Institution :
Cheju Nat. Univ., Cheju
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
120
Lastpage :
121
Abstract :
Single crystal whiskers of nano-periodic layered structure of Bi2Sr2Ca2Cu2.5Te0.5Ox for fabricating SET devices were successfully grown. The observation of multi-branch structures means that the grown whisker works as an interlayer-tunneling stack of series array and can use as a new electronic device using intrinsic Josephson effects. The electrical transport characteristics and size dependencies of these whiskers owing to the growing parameters like component ratio, heating temperature, oxygen flow rate and growth time will be discussed for applying SET devices.
Keywords :
Josephson effect; bismuth compounds; calcium compounds; high-temperature superconductors; single electron devices; strontium compounds; whiskers (crystal); BiSrCaCuTeO; heating temperature; interlayer-tunneling stack; intrinsic Josephson effects; layered single crystal whiskers; multibranch structures; nanoperiodic layered structure; oxygen flow rate; series array; single electron tunneling devices; Bismuth; Electrons; Josephson effect; Nanoscale devices; Nanostructures; Resistance heating; Strontium; Tellurium; Temperature dependence; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456133
Filename :
4456133
Link To Document :
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