DocumentCode
3048346
Title
Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles
Author
Yeom, Donghyuk ; Kang, Jeongmin ; Yoon, Changjoon ; Park, Byoungjun ; Kihyun Keem ; Jeong, Dong-Young ; Kim, Mihyun ; Koh, Eui Kwan ; Kim, Sangsig
Author_Institution
Korea Univ., Seoul
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
124
Lastpage
125
Abstract
In this work, top-gate single ZnO nanowire-based FETs embedded with Au nanoparticles as the charge storage were fabricated and their memory effects were characterized.
Keywords
II-VI semiconductors; field effect transistors; gold; nanoparticles; nanotechnology; nanowires; wide band gap semiconductors; zinc compounds; ZnO-Au; charge storage; floating gate nodes; memory characteristics; nanoparticles; top-gate semiconductor nanowire field-effect transistors; Charge carriers; FETs; Gold; Material storage; Nanoparticles; Nanoscale devices; Nonvolatile memory; Rapid thermal processing; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456135
Filename
4456135
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