Title :
Re-trapping process of charge traps in non-volatile memory with ONA structures
Author :
Cho, W.S. ; Oh, J.S. ; Kwak, D.W. ; Oh, H.T. ; Kim, W.S. ; Cho, H.Y.
Author_Institution :
Dongguk Univ., Gyeongju
Abstract :
To investigate the charge trapping behavior in Oxide-Nitride-AI2O3 (ONA) structures, time-resolved photo-depopulation (TRPD) was introduced with varying the temperature and the photon energy. ONA structures were fabricated with the thickness of 3 nm (tunneling), 7 nm, and 10 nm (blocking), respectively. Tunneling oxide was grown by thermal oxidation while nitride and Al2O3 layers were deposited by low pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD). All the measurements were carried out using real time with a spectrometer and an electrometer in the temperature ranges from 10 K to 300 K .
Keywords :
alumina; electron traps; semiconductor storage; ALD; Al2O3; ONA structures; TRPD; atomic layer deposition; charge trap retrapping process; chemical vapor deposition; low pressure CVD; nonvolatile memory; oxide-nitride-alumina structures; photon energy; size 10 nm; size 3 nm; size 7 nm; temperature 10 K to 300 K; thermal oxidation; time resolved photodepopulation; tunneling oxide; Displays; Educational institutions; Electron traps; Nonvolatile memory; Oxidation; Photoconductivity; Physics; Temperature; Tunneling; Wavelength measurement;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456136
