Title :
Electrical Characterization of Nano-Floating Gate Capacitor with Silicon Carbide Nano-Particles
Author :
Lee, Tae Hee ; Lee, Dong Uk ; Kim, Seon Pil ; Kim, Eun Kyu
Author_Institution :
Hanyang Univ., Seoul
Abstract :
We fabricated and characterized the electrical properties of nano-floating gate capacitors with SiC nano-particles embedded in SiO2 layer. We also showed a capability of this structure to application of the nonvolatile memory device.
Keywords :
annealing; capacitors; nanoelectronics; nanoparticles; nanotechnology; oxidation; random-access storage; rapid thermal processing; silicon compounds; transmission electron microscopy; wide band gap semiconductors; SiC-SiO2; SiO2; dry oxidation; electrical characterization; electrical property; high-resolution transmission electron microscopy; nanofloating gate capacitors; nanoparticles; nonvolatile memory device; post-annealing process; radiofrequency magnetron sputtering; rapid thermal process; room temperature; size 40 nm to 50 nm; temperature 293 K to 298 K; temperature 300 C; temperature 700 C; thermal evaporator system; time 3 min; tunnel oxide layer; Capacitance-voltage characteristics; Capacitors; Light emitting diodes; Nanoscale devices; Nonlinear optical devices; Radio frequency; Rapid thermal processing; Silicon carbide; Stability; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456139
