DocumentCode
3048408
Title
Fabrication of Nonvolatile Nano-Floating Gate Memory with Self-Assembled Metal-Oxide Nano-Particles Embedded in Polyimide
Author
Kim, Seon Pil ; Lee, Tae Hee ; Lee, Dong Uk ; Kim, Eun Kyu ; Koo, Hyun-Mo ; Cho, Won-Ju ; Kim, Young-Ho
Author_Institution
Hanyang Univ., Seoul
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
134
Lastpage
135
Abstract
In this article, the nonvolatile nano-floating gate memory (NFGM) device was fabricated with self-assembled metal-oxide nano-particles embedded in a polyimide gate insulator and characterized.
Keywords
indium compounds; nanoelectronics; nanoparticles; polymer insulators; random-access storage; self-assembly; device fabrication; nonvolatile nanofloating gate memory device; polyimide gate insulator; self-assembled metal-oxide nanoparticles; Etching; Fabrication; Inorganic materials; Insulation; Metal-insulator structures; Nanoscale devices; Nonvolatile memory; Polyimides; Self-assembly; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456140
Filename
4456140
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