DocumentCode :
3048408
Title :
Fabrication of Nonvolatile Nano-Floating Gate Memory with Self-Assembled Metal-Oxide Nano-Particles Embedded in Polyimide
Author :
Kim, Seon Pil ; Lee, Tae Hee ; Lee, Dong Uk ; Kim, Eun Kyu ; Koo, Hyun-Mo ; Cho, Won-Ju ; Kim, Young-Ho
Author_Institution :
Hanyang Univ., Seoul
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
134
Lastpage :
135
Abstract :
In this article, the nonvolatile nano-floating gate memory (NFGM) device was fabricated with self-assembled metal-oxide nano-particles embedded in a polyimide gate insulator and characterized.
Keywords :
indium compounds; nanoelectronics; nanoparticles; polymer insulators; random-access storage; self-assembly; device fabrication; nonvolatile nanofloating gate memory device; polyimide gate insulator; self-assembled metal-oxide nanoparticles; Etching; Fabrication; Inorganic materials; Insulation; Metal-insulator structures; Nanoscale devices; Nonvolatile memory; Polyimides; Self-assembly; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456140
Filename :
4456140
Link To Document :
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