Title :
Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures
Author :
Plumwongrot, D. ; Tamura, Yoshinobu ; Maruyama, Tetsuhiro
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
Fabrication processes of GalnAsP/InP arbitrary shaped low dimensional quantum structures using electron beam (EB) lithography, Ti-mask lift-off and reactive ion etching (RIE)-dry etching is reported. Scanning electron microscopy is used to characterised the samples. Various patterns were successfully achieved such as quantum wires and quantum dots with better dimensional and positional controllability than the self-assemble growth process.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor quantum wires; sputter etching; GaInAsP-InP; InP; RIE-dry etching; Ti-mask lift-off; electron beam lithography; quantum dots; quantum structures; quantum wires; reactive ion etching; scanning electron microscopy; Controllability; Electron beams; Electron optics; Etching; Fabrication; Geometrical optics; Indium phosphide; Materials science and technology; Optical buffering; Particle beam optics;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456151
