DocumentCode
3048594
Title
Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures
Author
Plumwongrot, D. ; Tamura, Yoshinobu ; Maruyama, Tetsuhiro
Author_Institution
Tokyo Inst. of Technol., Tokyo
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
156
Lastpage
157
Abstract
Fabrication processes of GalnAsP/InP arbitrary shaped low dimensional quantum structures using electron beam (EB) lithography, Ti-mask lift-off and reactive ion etching (RIE)-dry etching is reported. Scanning electron microscopy is used to characterised the samples. Various patterns were successfully achieved such as quantum wires and quantum dots with better dimensional and positional controllability than the self-assemble growth process.
Keywords
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor quantum wires; sputter etching; GaInAsP-InP; InP; RIE-dry etching; Ti-mask lift-off; electron beam lithography; quantum dots; quantum structures; quantum wires; reactive ion etching; scanning electron microscopy; Controllability; Electron beams; Electron optics; Etching; Fabrication; Geometrical optics; Indium phosphide; Materials science and technology; Optical buffering; Particle beam optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456151
Filename
4456151
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