Title :
Fabrication and in-plane electrical resistivity of Ge/SiGe quantum dot superlattices
Author :
Hayashi, K. ; Abiko, S. ; Motegi, N. ; Kajitani, T.
Author_Institution :
Tohoku Univ., Sendai
Abstract :
The in-plane electrical resistivity of the Ge/SiGe dot superlattices was studied in this paper. It is found that the electrical resistivity depends on the dot density as well as the Ge thickness. Very low electrical resistivity (lower than 9.15 times 10-2 Omegacm) is realized for the horizontal conductance.
Keywords :
electrical conductivity; electrical resistivity; elemental semiconductors; germanium; semiconductor quantum dots; semiconductor superlattices; Ge thickness; Ge-SiGe; Ge/SiGe quantum dot superlattices; dot density; horizontal conductance; in-plane electrical resistivity; Atomic force microscopy; Electric resistance; Fabrication; Germanium silicon alloys; Optical films; Quantum dots; Silicon germanium; Superlattices; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456153
