Title :
The in-situ Annealing of Electroless Deposited Copper Films Using NITD Method for ULSI
Author :
Chou, Y.H. ; Liu, Y.M. ; Sung, Y. ; Ger, M.D. ; Wang, C.A.
Author_Institution :
Nat. Defense Univ., Taoyuan
Abstract :
In this paper we demonstrate the feasibility of direct electroless plating of copper in the NITD system with in-situ annealing treatment. As a result of the high temperature effect during deposition, the peak ratio of Cu (111 )/Cu (200) of copper film reached 19. The resistivity of as-deposited Cu layer was as low as 2.45 muOmega-cm. The NTID system, using single step to deposit metal film, has several advantages that can discard the post-annealing and simplify the deposition processes. It has potential for the application on ULSI.
Keywords :
ULSI; annealing; copper; electroless deposition; metallic thin films; Cu; NITD method; ULSI; copper films; direct electroless plating; electroless deposition; in-situ annealing; resistivity; Annealing; Chemical technology; Chemistry; Conductivity; Copper; Costs; Materials science and technology; Substrates; Temperature; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456158
