DocumentCode
3048694
Title
The in-situ Annealing of Electroless Deposited Copper Films Using NITD Method for ULSI
Author
Chou, Y.H. ; Liu, Y.M. ; Sung, Y. ; Ger, M.D. ; Wang, C.A.
Author_Institution
Nat. Defense Univ., Taoyuan
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
170
Lastpage
171
Abstract
In this paper we demonstrate the feasibility of direct electroless plating of copper in the NITD system with in-situ annealing treatment. As a result of the high temperature effect during deposition, the peak ratio of Cu (111 )/Cu (200) of copper film reached 19. The resistivity of as-deposited Cu layer was as low as 2.45 muOmega-cm. The NTID system, using single step to deposit metal film, has several advantages that can discard the post-annealing and simplify the deposition processes. It has potential for the application on ULSI.
Keywords
ULSI; annealing; copper; electroless deposition; metallic thin films; Cu; NITD method; ULSI; copper films; direct electroless plating; electroless deposition; in-situ annealing; resistivity; Annealing; Chemical technology; Chemistry; Conductivity; Copper; Costs; Materials science and technology; Substrates; Temperature; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456158
Filename
4456158
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