• DocumentCode
    3048844
  • Title

    Nano-holes fabricated by Ion Beam Induced Deposition

  • Author

    Chen, Ping ; Wu, Mengyue ; Alkemade, Paul F A ; Salemink, Huub W.M.

  • Author_Institution
    Delft Univ. of Technol., Delft
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    184
  • Lastpage
    185
  • Abstract
    The authors fabricated 10 nanometer holes in 45 nm thick suspending Si3N4 membrane using a single-step ion beam induced deposition (IBID). Results showed that the size of the holes can be controlled by the current, dwell time and exposure time of the beam and the holes size depends on a balance between sputtering and deposition in IBID, which changes from sputtering in the island´s center to deposition in its rim. The balance can be optimized through adjusting the Ga beam parameters.
  • Keywords
    ion beam assisted deposition; membranes; nanostructured materials; nanotechnology; silicon compounds; sputtering; Si3N4; beam current; beam exposure time; gallium beam parameters; ion beam induced deposition; nanohole fabrication; size 10 nm; size 45 nm; sputtering; suspending membrane; Biomembranes; Electron beams; Fabrication; Focusing; Ion beams; Milling; Scanning electron microscopy; Shape; Sputtering; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456165
  • Filename
    4456165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3048844