Title :
Nano-holes fabricated by Ion Beam Induced Deposition
Author :
Chen, Ping ; Wu, Mengyue ; Alkemade, Paul F A ; Salemink, Huub W.M.
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
The authors fabricated 10 nanometer holes in 45 nm thick suspending Si3N4 membrane using a single-step ion beam induced deposition (IBID). Results showed that the size of the holes can be controlled by the current, dwell time and exposure time of the beam and the holes size depends on a balance between sputtering and deposition in IBID, which changes from sputtering in the island´s center to deposition in its rim. The balance can be optimized through adjusting the Ga beam parameters.
Keywords :
ion beam assisted deposition; membranes; nanostructured materials; nanotechnology; silicon compounds; sputtering; Si3N4; beam current; beam exposure time; gallium beam parameters; ion beam induced deposition; nanohole fabrication; size 10 nm; size 45 nm; sputtering; suspending membrane; Biomembranes; Electron beams; Fabrication; Focusing; Ion beams; Milling; Scanning electron microscopy; Shape; Sputtering; Transmission electron microscopy;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456165
