DocumentCode :
3048875
Title :
Nanopatterning of Si wafer surface using microphase-separated structure of block copolymer as wet etching mask
Author :
Watanabe, R. ; Kamata, K. ; Iyoda, T.
Author_Institution :
Tokyo Inst. of Technol., Yokohama
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
188
Lastpage :
189
Abstract :
This report presents a new lithographic process utilizing the microphase-separated structures as an etching mask for wet chemical etching of Si wafer. The process demonstrated in this study could open easy tuning of pattern size by changing molecular weight of block copolymers and large area nanopattern transcription with high throughput.
Keywords :
elemental semiconductors; etching; masks; nanolithography; nanopatterning; polymer blends; silicon; Si; Si wafer surface; block copolymer; lithographic process; microphase-separated structure; nanopattern transcription; nanopatterning; pattern size tuning; wet chemical etching; wet etching mask; Annealing; Chemical processes; Chemical technology; Crystallization; Image analysis; Nanopatterning; Polymer films; Semiconductor films; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456167
Filename :
4456167
Link To Document :
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