The deposition and planarization of a conformal, 300 degrees C APCVD interlevel dielectric

Author

White, L.K. ; Shaw, J.M. ; Kurylo, W.A. ; Miszkowski, N.A.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1988

fDate

13-14 June 1988

Firstpage

397

Lastpage

403

Abstract

Borosilicate glasses (BSGs) produced from atmospheric pressure chemical vapor deposition (APCVD) systems are shown to be suitable for practical multilevel metal interlevel dielectric applications. A batch hot-plate reactor produced films at 300 degrees C at a deposition rate of 700 AA/min, film thickness uniformity +or-4%, a compressive stress of 1*10/sup +9/ dynes/cm/sup 2/, and a step coverage conformality of 0.8. The APCVD BSG also has advantages for sacrificial spin-on-glass (SOG) etchback planarization processes. Its dry etch rate is 1.3 times that of thermal oxide which makes matching SOG etch rates easier, and the redeposited film has the ability to fill small crevices to provide a smooth surface for metallization step coverage.<>

Keywords

borosilicate glasses; chemical vapour deposition; dielectric thin films; metallisation; sputter etching; 300 degC; APCVD interlevel dielectric; B2O3-SiO2; BSG; batch hot-plate reactor; compressive stress; deposition rate; dry etch rate; metallization step coverage; multilevel metal interlevel dielectric; planarization; sacrificial SOG; smooth surface; step coverage conformality; thickness uniformity; Atomic layer deposition; Boron; Compressive stress; Dielectrics; Dry etching; Glass; Inductors; Metallization; Planarization; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE

Conference_Location

Santa Clara, CA, USA

Type

conf

DOI

10.1109/VMIC.1988.14218

Filename

14218