Electrical and optical properties of p-type InMnP:Zn for nano-spintronics

Author

Kim, Jin Soak ; Ha, L. ; Lee, Y.-I. ; Kim, Eun Kyu ; Shon, Yoon

Author_Institution

Hanyang Univ., Seoul

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

214

Lastpage

215

Abstract

In this paper, we studied the electrical and optical properties of magnetic impurities and non-magnetic impurities of p-type InMnP:Zn co-doped with Zn by using electrical measurements such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and photo-induced current transient spectroscopy. In the InMnP:Zn used in this study, ion implantation to InP:Zn and post annealing methods are used to achieve the effective substitutions of the In⁺-cations by Mn⁺-magnetic ions.

Keywords

III-V semiconductors; capacitance; deep level transient spectroscopy; indium compounds; magnetic impurities; magnetoelectronics; manganese compounds; nanostructured materials; photoconductivity; photoemission; semimagnetic semiconductors; zinc; DLTS; InMnP:Zn; Mn⁺ magnetic ions; capacitance-voltage property; deep level transient spectroscopy; diluted magnetic semiconductor; electrical properties; ion implantation; magnetic impurities; optical properties; p-type DMS material; photoinduced current transient spectroscopy; post annealing; zinc codoping; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Electric variables measurement; Impurities; Ion implantation; Magnetic properties; Particle beam optics; Spectroscopy; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456180

Filename

4456180