DocumentCode
3049262
Title
Study of electronic parameters of mesoporous silicon under adsorption of viruses of plants
Author
Vashpanov, Yu. ; Son, Jung-Young
Author_Institution
Hanyang Univ., Seoul
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
238
Lastpage
239
Abstract
The mechanism of influence of adsorption of viruses of plants on voltage-ampere characteristic is connected with redistribution of a voltage on barrier structures and depends on type of viruses. Measurement of electronic characteristics of porous silicon can be used for creation of detectors for presence of viruses in an environment.
Keywords
adsorption; botany; elemental semiconductors; mesoporous materials; microorganisms; porous semiconductors; silicon; Si; adsorption; electronic parameters; mesoporous silicon; plants; viruses; voltage redistribution; voltage-ampere characteristic; Chemicals; Computer viruses; Extraterrestrial measurements; Gases; Mesoporous materials; Semiconductor materials; Silicon; Surface morphology; Viruses (medical); Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456192
Filename
4456192
Link To Document