• DocumentCode
    3049359
  • Title

    Dry Etching of CaF2 by Solid Source H2O (ice) Plasma

  • Author

    Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio

  • Author_Institution
    Tokyo Inst. of Technol., Tokyo
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    A plasma dry etching process is investigated in this study for fine pattern fabrication of optical or electron devices. The etched depth of CaF2, which depends on the presence of silicon or magnetic field, increases with increasing RF power. It is found that the etched surface is sufficiently smooth as required for optical device applications.
  • Keywords
    calcium compounds; plasma materials processing; semiconductor materials; sputter etching; surface morphology; CaF2; electron devices; fine pattern fabrication; optical devices; plasma dry etching; solid source ice plasma; surface morphology; Dry etching; Electron devices; Electron optics; Magnetic fields; Optical device fabrication; Optical devices; Plasma applications; Plasma devices; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456197
  • Filename
    4456197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3049359