Title :
Dry Etching of CaF2 by Solid Source H2O (ice) Plasma
Author :
Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
A plasma dry etching process is investigated in this study for fine pattern fabrication of optical or electron devices. The etched depth of CaF2, which depends on the presence of silicon or magnetic field, increases with increasing RF power. It is found that the etched surface is sufficiently smooth as required for optical device applications.
Keywords :
calcium compounds; plasma materials processing; semiconductor materials; sputter etching; surface morphology; CaF2; electron devices; fine pattern fabrication; optical devices; plasma dry etching; solid source ice plasma; surface morphology; Dry etching; Electron devices; Electron optics; Magnetic fields; Optical device fabrication; Optical devices; Plasma applications; Plasma devices; Radio frequency; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456197
