Title :
First-Principle Study on Piezoresistance Effect in Silicon Nanowires
Author :
Nakamura, Koichi ; Isono, Yoshitada ; Toriyama, Toshiyuki
Author_Institution :
Ritsumeikan Univ., Kusatsu
Abstract :
In this study, we have simulated the piezoresistance effect in bulk silicon and silicon nanowires (SiNWs) based on the first-principle calculations of model structures. The band structure changes according to stress was observed o the SiNWs model. The piezoresistance coefficients with respect to cross-sectional area of 50 nm SiNW together with SEM image of the model were presented.
Keywords :
ab initio calculations; band structure; elemental semiconductors; nanowires; piezoresistance; scanning electron microscopy; silicon; SEM; Si; band structure; first-principle calculations; piezoresistance effect; silicon nanowires; size 50 nm; stress; Conducting materials; Conductivity; Crystalline materials; Effective mass; Nanostructured materials; Nanowires; Photonic band gap; Piezoresistance; Silicon; Stability;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456207
