Design of tunneling field-effect transistor (TFET) with AlxGa1−xAS/InxGa1−xAs hetero-junction

In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel hetero-junction is Al_xGa_1-xAs/In_xGa_1-xAs. With precise selection of the mole fraction this hetero-junction, excellent device operation has been achieved. With optimized mole fraction and doping value in the source and the channel regions, on-state current as high as 18 μA/μm and very low off-state current of 10^-18 is attained. Moreover in the proposed TFET I_on/I_off ratio is 10¹³ which is very high. Also sub-threshold swing of 30 mv/decade is achieved which is well below 60 mv/decade.