Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction

Author

Marjani, Saeid ; Hosseini, Seyed Ebrahim ; Faez, Rahim

Author_Institution

Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran

fYear

2013

fDate

14-16 May 2013

Firstpage

1

Lastpage

4

Abstract

The comprehensive optical-electrical-gain-thermal self-consistent model of the 1.55 μm AlGaInAs Photonic Crystal vertical cavity surface emitting diode lasers (PhC VCSELs) with buried tunnel junction (BTJ) has been applied to optimize its threshold characteristics. It shows that, for 5 μm devices, the room temperature (RT) threshold current equal to only 0.59 mA and maximum operating temperature equal to as much as 380 K. Results suggest that, the 5 μm AlGaInAs PhC VCSELs seem to be the most optimal ones for light sources in high performance optical communication systems.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; surface emitting lasers; AlGaInAs; InP; VCSEL; buried tunnel junction; current 0.59 mA; light sources; optical communication systems; optical-electrical-gain-thermal self-consistent model; photonic crystal vertical cavity surface emitting diode lasers; temperature 293 K to 298 K; temperature 380 K; wavelength 1.55 mum; wavelength 5 mum; Indium phosphide; Junctions; Optical reflection; Photonic crystals; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2013 21st Iranian Conference on

Conference_Location

Mashhad

Type

conf

DOI

10.1109/IranianCEE.2013.6599783

Filename

6599783