THz frequency conversion by four wave mixing in multi quantum well injection locked InGaAsP laser oscillators

Author

Debernardi, P. ; Osella, G.

Author_Institution

CESPA/CNR, Politecnico di Torino, Italy

Volume

3

fYear

1996

fDate

13-16 May 1996

Firstpage

1505

Abstract

A complete model to evaluate frequency conversion due to highly nondegenerate four-wave mixing in injection locked Fabry-Perot MQW laser oscillators is presented; it includes, besides carrier density fluctuations, very fast phenomena and propagation effects. The locking conditions are analyzed by means of an approximate method based on the mean field limit. The numerical results show good conversion gain up to the THz region and a complex behavior of the frequency response near side resonances; in particular controlled injection locking allows one to achieve a wide band response for the conversion gain

Keywords

Fabry-Perot resonators; III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser mode locking; laser theory; multiwave mixing; optical frequency conversion; quantum well lasers; InGaAsP; THz frequency conversion; carrier density fluctuations; complex behavior; controlled injection locking; conversion gain; four wave mixing; frequency response; highly nondegenerate four-wave mixing; injection locked Fabry-Perot MQW laser oscillators; locking conditions; mean field limit; multi quantum well injection locked InGaAsP laser oscillators; propagation effects; side resonances; very fast phenomena; wide band response; Charge carrier density; Fabry-Perot; Fluctuations; Four-wave mixing; Frequency conversion; Injection-locked oscillators; Laser mode locking; Optical propagation; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean

Conference_Location

Bari

Print_ISBN

0-7803-3109-5

Type

conf

DOI

10.1109/MELCON.1996.551236

Filename

551236