Title :
A GaAs MMIC active filter with low noise and high gain
Author_Institution :
Inst. of Electron. Syst., Aalborg Univ., Denmark
Abstract :
An active image rejection filter applying actively coupled passive resonators is presented. The filter has very low noise and high insertion gain, which may eliminate the use of an LNA in front-end applications. The filter is applicable as a single block LNA and image rejection filter in cordless and mobile telephone systems working around 2 GHz, e.g. DECT and DCS-1800 systems. The GaAs MMIC chip area is 3.3 mm/sup 2/. The filter has 12 dB insertion gain, 45 dB image rejection, 6.2 dB SSB noise figure and consumes 13 mW power from a 3 V supply.
Keywords :
III-V semiconductors; MMIC; active filters; cordless telephone systems; gallium arsenide; integrated circuit noise; microwave filters; telephone sets; 12 dB; 13 mW; 2 GHz; 3 V; 6.2 dB; DCS-1800; DECT; GaAs; GaAs MMIC active filter; SSB noise figure; cordless telephone system; front end; image rejection; insertion gain; mobile telephone system; passive resonator; Active filters; Active noise reduction; Amplitude modulation; Gain; Gallium arsenide; MMICs; Noise figure; Passive filters; Resonator filters; Telephony;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700583
