Title :
Microstructuring of dual damascene opening by using hot-embossing combined with etch-back process
Author :
Sung-Won Youn ; Ueno, Akihisa ; Takahashi, Masaharu ; Maeda, Ryutaro
Author_Institution :
Nat. Inst. of AIST, Ibaraki
Abstract :
This study demonstrates a microstructuring process of a dual damascene opening in low-k poly(chloro-p-xylylene) (parylene-C)/Si sample by using hot-embossing combined with etch-back technique. By lowering the initial layer thickness, the residual layer thickness could be reduced to a negligibly low level, coming along with a very good uniformity. After the subsequent O2/CHF3-based reactive ion etching (RIE), a dual damascene opening was successfully formed in parylene-C/Si sample.
Keywords :
dielectric materials; elemental semiconductors; embossing; low-k dielectric thin films; metallisation; polymer films; semiconductor thin films; silicon; sputter etching; O2-CHF3-based reactive ion etching; RIE; Si; dual damascene opening; etch back process; hot embossing; low-k poly(chloro-p-xylylene) dielectric; microstructuring; parylene-C-silicon; residual layer; Chemical sensors; Dielectrics; Embossing; Etching; Integrated circuit metallization; Manufacturing processes; Mechanical factors; Micromechanical devices; Optical films; Protection;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456230
