Microstructuring of dual damascene opening by using hot-embossing combined with etch-back process

Author

Sung-Won Youn ; Ueno, Akihisa ; Takahashi, Masaharu ; Maeda, Ryutaro

Author_Institution

Nat. Inst. of AIST, Ibaraki

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

314

Lastpage

315

Abstract

This study demonstrates a microstructuring process of a dual damascene opening in low-k poly(chloro-p-xylylene) (parylene-C)/Si sample by using hot-embossing combined with etch-back technique. By lowering the initial layer thickness, the residual layer thickness could be reduced to a negligibly low level, coming along with a very good uniformity. After the subsequent O₂/CHF₃-based reactive ion etching (RIE), a dual damascene opening was successfully formed in parylene-C/Si sample.

Keywords

dielectric materials; elemental semiconductors; embossing; low-k dielectric thin films; metallisation; polymer films; semiconductor thin films; silicon; sputter etching; O₂-CHF₃-based reactive ion etching; RIE; Si; dual damascene opening; etch back process; hot embossing; low-k poly(chloro-p-xylylene) dielectric; microstructuring; parylene-C-silicon; residual layer; Chemical sensors; Dielectrics; Embossing; Etching; Integrated circuit metallization; Manufacturing processes; Mechanical factors; Micromechanical devices; Optical films; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456230

Filename

4456230