• DocumentCode
    3050056
  • Title

    Fabrication of high-aspect-ratio pillars by Proton Beam Writing and Application to DEP-devices

  • Author

    Furuta, Y. ; Uchiya, N. ; Nishikawa, H. ; Haga, J. ; Oikawa, M. ; Satoh, T. ; Ishii, Y. ; Kamiya, T. ; Nakao, R. ; Uchida, S.

  • Author_Institution
    Shibaura Inst. of Technol., Tokyo
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    340
  • Lastpage
    341
  • Abstract
    Scanning electron microscopy (SEM) images show that 21 mum thick SU-8 pillars on silicon develop after proton beam writing (PBW). These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 mum and a width of as small as 1.1 mum with a high aspect ratio of 20, and with a uniformity over 700 mum square area. An optical microscope image shows a part of a dielectrophoretic (DEP) device, where the high-aspect-ratio SU-8 pillars with a 12 mum pitch are formed in the gap between the two surface electrodes. Preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes are examined.
  • Keywords
    electrophoresis; lithography; optical microscopy; proton effects; resists; scanning electron microscopy; Escherichia coli; SEM; Si; dielectrophoretic device; frequency 100 kHz; high-aspect-ratio pillars; optical microscopy; pillar structures; proton beam writing; scanning electron microscopy; silicon; surface electrodes; voltage 3 V; Dielectrophoresis; Electrodes; Electron beams; Fabrication; Optical devices; Optical microscopy; Particle beams; Scanning electron microscopy; Silicon; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456243
  • Filename
    4456243