Geometrical study of MOSFET for improved stress sensitivity

The sensitivity of MOSFET with respect to the geometrical variations for the various applications is studied. The ratios of the current variation, with the forces, verifies that the sensitivity is increased with the applied forces. The maximum sensitivity is achieved with the unconnected smaller gate length. The stress distribution is also affects the sensitivity. The device containing 80% of the maximum stress (w=40mum) is more sensitive than other device containing more stress region (w=50mum). In other words, the sensitivity is related with the stress density, not the stress quantity. Therefore the better sensitivity is achieved with the smaller gate channel length and the gate channel width containing the high stress density, and the longitudinal direction.