Fabrication of High Precision X-ray Mask Using Silicon Dry Etching

The aim of the paper is to fabricated the new X-ray mask with accuracy patterns. In order to introduce the ICP etching system, high aspect ratio Si structure having a width of 1.9 mum was obtained. Using additionally Si dry etching in UV lithography process, high precision and rectangular X-ray masks having a resist microstructure of 4.5 mum pitch and 5 mum height has been fabricated. After Si wet etching, Au was electroplating on a groove of the resist microstructure as narrow as 2.7 mum, and successful formed high density and void-free. This study has verified that the new method is suitable for the high precision fabrication of finely and complexly patterned X-ray masks, and is expected to be used in the production of a wide variety of devices that have not yet been put into practice.