DocumentCode
3050511
Title
Fabrication of Bistable Prestressed Curved-Beam
Author
Pane, Ivransa Z. ; Asano, Tanemasa
Author_Institution
Kyushu Univ., Fukuoka
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
390
Lastpage
391
Abstract
Bistable curved-beams are micro electro mechanical systems (MEMS) that can switch over two stable bending states and maintain these states without consuming power. One of the most attractive applications of these structures is memory devices. A prestressed curved-beam of single crystal Si is fabricated through the sequences of the standard CMOS process using SOI. The theoretical analysis procedure for the bistable operation is established. The miniaturized bistable curved-beam is applied to memory devices.
Keywords
elemental semiconductors; micromechanical devices; semiconductor storage; silicon; silicon-on-insulator; CMOS process; SOI; Si; bistable prestressed curved-beam; memory devices; single crystal; CMOS process; Cleaning; Dry etching; Fabrication; Micromechanical devices; Nonvolatile memory; Oxidation; Potential energy; Switches; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456268
Filename
4456268
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