• DocumentCode
    3050511
  • Title

    Fabrication of Bistable Prestressed Curved-Beam

  • Author

    Pane, Ivransa Z. ; Asano, Tanemasa

  • Author_Institution
    Kyushu Univ., Fukuoka
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    390
  • Lastpage
    391
  • Abstract
    Bistable curved-beams are micro electro mechanical systems (MEMS) that can switch over two stable bending states and maintain these states without consuming power. One of the most attractive applications of these structures is memory devices. A prestressed curved-beam of single crystal Si is fabricated through the sequences of the standard CMOS process using SOI. The theoretical analysis procedure for the bistable operation is established. The miniaturized bistable curved-beam is applied to memory devices.
  • Keywords
    elemental semiconductors; micromechanical devices; semiconductor storage; silicon; silicon-on-insulator; CMOS process; SOI; Si; bistable prestressed curved-beam; memory devices; single crystal; CMOS process; Cleaning; Dry etching; Fabrication; Micromechanical devices; Nonvolatile memory; Oxidation; Potential energy; Switches; Thermal force;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456268
  • Filename
    4456268