Photoresist challenges and potential solutions for the 32 nm half-pitch node and beyond

All three lithography technologies currently competing for insertion at the 32 nm hp node pose serious challenges in the resist area that must be resolved. Specifically, meeting line edge roughness (LER) specifications will be difficult for all technologies but more so for EUV than for double exposure lithography (DEL) and 193+. Continued progress in resist performance for all three technologies requires a much more fundamental approach towards materials research and development than for previous lithography nodes. Understanding resist exposure and processing on the time and length scales required will become even more important as the industry starts to explore 22 nm hp resists in the near future.