Title :
Negative-Tone Molecular Resist with High-Sensitivity for EUV and EB Lithography
Author :
Kojima, K. ; Mori, S. ; Hada, H. ; Shiono, D. ; Onodera, J. ; Oizumi, H. ; Nishiyama, I.
Author_Institution :
Hitachi Ltd., Tokyo
Abstract :
Results of another molecular design of the negative-tone molecular resist for improvement of sensitivity were discussed. Frictional force spectroscopy (FFS) was performed for investigating thermal property of resist films by a scanning probe microscope (SPM) with sweeping temperature. Depth profile of the resist components was measured by TOF-SIMS with gradient shaving preparation. EB lithographic characteristics of the resists were evaluated and EUV imaging was performed.
Keywords :
electron beam lithography; photoresists; scanning probe microscopy; secondary ion mass spectra; time of flight mass spectroscopy; ultraviolet lithography; EB lithography; EUV lithography; SPM; TOF-SIMS; depth profile; frictional force spectroscopy; gradient shaving preparation; negative-tone molecular resist; resist films; scanning probe microscope; sensitivity improvement; sweeping temperature; Acceleration; Lithography; Polymers; Productivity; Resists; Substrates; Thermal force; Thermal resistance; Ultra large scale integration; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456289
