High field phenomena in poly-p-xylylene thin films-oxidation effects

Author

Mizutani, T. ; Mori, T. ; Matsui, T.

Author_Institution

Nagoya Univ., Japan

fYear

1990

fDate

28-31 Oct 1990

Firstpage

237

Lastpage

242

Abstract

High-field currents in PPX thin films were suppressed by the introduction of an oxidized layer. The closer to the anode the oxidized layer was located, the more effectively it suppressed the high-field current. The oxidized layer also increased the dielectric strength of PPX thin film. These results can be explained in terms of carrier scattering due to C=0 in the oxidized layer and the suppression of hole injection from the anode due to the oxidized layer

Keywords

dielectric thin films; high field effects; insulating thin films; oxidation; polymer films; PPX thin films; carrier scattering; dielectric strength; high field phenomena; high-field current suppression; oxidized layer; poly-p-xylylene; suppression of hole injection; Artificial intelligence; Breakdown voltage; Electric breakdown; Electrodes; Electromagnetic wave absorption; Ionization; Oxidation; Pulse measurements; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 1990. Annual Report., Conference on

Conference_Location

Pocono Manor, PA

Type

conf

DOI

10.1109/CEIDP.1990.201348

Filename

201348

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3050886