Title :
High field phenomena in poly-p-xylylene thin films-oxidation effects
Author :
Mizutani, T. ; Mori, T. ; Matsui, T.
Author_Institution :
Nagoya Univ., Japan
Abstract :
High-field currents in PPX thin films were suppressed by the introduction of an oxidized layer. The closer to the anode the oxidized layer was located, the more effectively it suppressed the high-field current. The oxidized layer also increased the dielectric strength of PPX thin film. These results can be explained in terms of carrier scattering due to C=0 in the oxidized layer and the suppression of hole injection from the anode due to the oxidized layer
Keywords :
dielectric thin films; high field effects; insulating thin films; oxidation; polymer films; PPX thin films; carrier scattering; dielectric strength; high field phenomena; high-field current suppression; oxidized layer; poly-p-xylylene; suppression of hole injection; Artificial intelligence; Breakdown voltage; Electric breakdown; Electrodes; Electromagnetic wave absorption; Ionization; Oxidation; Pulse measurements; Temperature; Transistors;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1990. Annual Report., Conference on
Conference_Location :
Pocono Manor, PA
DOI :
10.1109/CEIDP.1990.201348
