• DocumentCode
    3051117
  • Title

    Directional Control of Single-Walled Carbon Nanotubes on Surface-Engineered Sapphire

  • Author

    Imamoto, K. ; Ago, H. ; Ishigami, N. ; Ikeda, K. ; Tsuji, M. ; Ikuta, T. ; Takahashi, K.

  • Author_Institution
    Kyushu Univ., Fukuoka
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    456
  • Lastpage
    457
  • Abstract
    In this article a new method is proposed to align SWNTs on single crystal sapphire substrates, which is called as "surface atomic arrangement-programmed (AAP) growth". On the A-and R-plane sapphire surfaces, SWNTs grew along the specific crystallographic directions due to anisotropic nanotube-substrate interaction. The correlation between the atomic arrangement and the step/terrace structure on the SWNT growth direction by tailoring step/terrace structure on A-plane sapphire is discussed.
  • Keywords
    atomic force microscopy; carbon nanotubes; nanoelectronics; nanotechnology; sapphire; AFM; Al2O3; C; anisotropic nanotube-substrate interaction; atomic arrangement-programmed growth; nanoelectronics; single-walled carbon nanotubes; surface-engineered sapphire substrates; Annealing; Carbon nanotubes; Chemical industry; Chemical technology; Chemical vapor deposition; Chemistry; Nanoscale devices; Nanostructured materials; Organic materials; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456301
  • Filename
    4456301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3051117