Molecular engineering for future device structures: self-assembled monolayers as diffusion barriers for Cu metallization

This paper investigates a selective self-assembly process for formation of a self-assembled monolayers (SAM) barrier to Cu diffusion in dual damascene integration. In selecting a barrier, trichlorosilanes are promising due to their high thermal stability (above 550degC) and dense molecular packing. Overall, this study demonstrates that the tuneable structure and chemistry of SAMs provides a molecular level engineering approach for future device structures.