A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

Author

Min-Seong Lee ; Donghwan Kim ; Sukeun Eom ; Ho-Young Cha ; Kwang-Seok Seo

Author_Institution

Dept. of Electr. Eng. & Comput. Sci, Seoul Nat. Univ., Seoul, South Korea

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

995

Lastpage

997

Abstract

A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 μs. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering >10 W of output power in X-band for GaN HEMTs technology on silicon substrate.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; AlGaN-GaN; HEMT; Si; X-band high-power amplifier; efficiency 39.4 percent; frequency 8 GHz; gate periphery; high electron mobility transistor; high-resistive silicon substrate; power 29.4 W; power 30 W; size 3.6 mm; time 100 mus; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Power generation; Silicon; Substrates; AlGaN/GaN-on-Si; PAE; X-band; amplifier; power density;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2343233

Filename

6879300